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6英寸SiC襯底片品牌
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眉山天樂(lè)半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
序號(hào) Item | 等級(jí) Grade | 精選級(jí)(Z級(jí)) Zero MPD Grade | 工業(yè)級(jí)(P級(jí)) Production Grade | 測(cè)試級(jí)(D級(jí)) Dummy Grade | |
1.晶體參數(shù) Boule Parameters | |||||
1.1 | 晶型 Polytype | 4H-N | |||
1.2 | 表面晶向偏離度 Surface orientation error | Off axis:4.0°toward<11-20>±0.5°,On axis:<0001>±0.5° | |||
2.電學(xué)參數(shù) Electrical Parameters | |||||
2.1 | 摻雜劑 Dopant | Nitrogen | |||
2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
3.機(jī)械參數(shù) Mechanical Parameters | |||||
3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
500μm±15μm | 500μm±25μm | ||||
3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
3.4 | 主定位邊長(zhǎng)度 Primary Flat Length | 47.5mm±2.0mm | |||
3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
4.結(jié)構(gòu) Structure | |||||
4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
4.3 | 螺位錯(cuò) TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
4.4 | 基平面位錯(cuò) BPD | ≤400cm-2 | ≤800cm-2 | / | |
4.5 | 刃位錯(cuò) TED | ≤2000cm-2 | ≤4000cm-2 | / | |
5.正面質(zhì)量 Front Quality | |||||
5.1 | 表面處理 Surface finish | CMP | |||
5.2 | 顆粒 Particle | ||||
5.3 | 劃痕 Scratches | None | |||
5.4 | 缺口/崩邊/裂紋/疵點(diǎn)/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
5.6 | 正面激光標(biāo)記 Front marking | / | |||
6.背面質(zhì)量 Back Quality | |||||
6.1 | 背面處理 Back finish | CMP | |||
6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
7.邊緣輪廓 Edge | |||||
7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
8.包裝 Packaging | |||||
8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
8.2 | 包裝 Packaging | 單片或25片包裝 | |||
Notes: None means no request. |
眉山天樂(lè)半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
序號(hào) Item | 等級(jí) Grade | 精選級(jí)(Z級(jí)) Zero MPD Grade | 工業(yè)級(jí)(P級(jí)) Production Grade | 測(cè)試級(jí)(D級(jí)) Dummy Grade | |
1.晶體參數(shù) Boule Parameters | |||||
1.1 | 晶型 Polytype | 4H-N | |||
1.2 | 表面晶向偏離度 Surface orientation error | Off axis:4.0°toward<11-20>±0.5°,On axis:<0001>±0.5° | |||
2.電學(xué)參數(shù) Electrical Parameters | |||||
2.1 | 摻雜劑 Dopant | Nitrogen | |||
2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
3.機(jī)械參數(shù) Mechanical Parameters | |||||
3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
500μm±15μm | 500μm±25μm | ||||
3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
3.4 | 主定位邊長(zhǎng)度 Primary Flat Length | 47.5mm±2.0mm | |||
3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
4.結(jié)構(gòu) Structure | |||||
4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
4.3 | 螺位錯(cuò) TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
4.4 | 基平面位錯(cuò) BPD | ≤400cm-2 | ≤800cm-2 | / | |
4.5 | 刃位錯(cuò) TED | ≤2000cm-2 | ≤4000cm-2 | / | |
5.正面質(zhì)量 Front Quality | |||||
5.1 | 表面處理 Surface finish | CMP | |||
5.2 | 顆粒 Particle | ||||
5.3 | 劃痕 Scratches | None | |||
5.4 | 缺口/崩邊/裂紋/疵點(diǎn)/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
5.6 | 正面激光標(biāo)記 Front marking | / | |||
6.背面質(zhì)量 Back Quality | |||||
6.1 | 背面處理 Back finish | CMP | |||
6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
7.邊緣輪廓 Edge | |||||
7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
8.包裝 Packaging | |||||
8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
8.2 | 包裝 Packaging | 單片或25片包裝 | |||
Notes: None means no request. |
眉山天樂(lè)半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
序號(hào) Item | 等級(jí) Grade | 精選級(jí)(Z級(jí)) Zero MPD Grade | 工業(yè)級(jí)(P級(jí)) Production Grade | 測(cè)試級(jí)(D級(jí)) Dummy Grade | |
1.晶體參數(shù) Boule Parameters | |||||
1.1 | 晶型 Polytype | 4H-N | |||
1.2 | 表面晶向偏離度 Surface orientation error | Off axis:4.0°toward <11-20>±0.5°,On axis:<0001>±0.5° | |||
2.電學(xué)參數(shù) Electrical Parameters | |||||
2.1 | 摻雜劑 Dopant | Nitrogen | |||
2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
3.機(jī)械參數(shù) Mechanical Parameters | |||||
3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
500μm±15μm | 500μm±25μm | ||||
3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
3.4 | 主定位邊長(zhǎng)度 Primary Flat Length | 47.5mm±2.0mm | |||
3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
4.結(jié)構(gòu) Structure | |||||
4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
4.3 | 螺位錯(cuò) TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
4.4 | 基平面位錯(cuò) BPD | ≤400cm-2 | ≤800cm-2 | / | |
4.5 | 刃位錯(cuò) TED | ≤2000cm-2 | ≤4000cm-2 | / | |
5.正面質(zhì)量 Front Quality | |||||
5.1 | 表面處理 Surface finish | CMP | |||
5.2 | 顆粒 Particle | ||||
5.3 | 劃痕 Scratches | None | |||
5.4 | 缺口/崩邊/裂紋/疵點(diǎn)/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
5.6 | 正面激光標(biāo)記 Front marking | / | |||
6.背面質(zhì)量 Back Quality | |||||
6.1 | 背面處理 Back finish | CMP | |||
6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
7.邊緣輪廓 Edge | |||||
7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
8.包裝 Packaging | |||||
8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
8.2 | 包裝 Packaging | 單片或25片包裝 | |||
Notes: None means no request. |
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